Photoluminescence of InAs/GaAs Quantum Dots in the Presence of Subband 1.06 um Excitation

Abstract

In summary we experimentally observe the increase of the PL intensity in InAs/GaAs self assembled QDs induced by subband 1.06 micron optical excitation. For low interband excitation density the relative increase reaches the value of 40%. The relative increase of PL intensity saturates at high density of subband excitation. We would like to point that the present observation may be useful in the attempts to decrease the threshold current density in QD lasers.

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Document Details

Document Type
Technical Report
Publication Date
Jun 18, 1999
Accession Number
ADP012866

Entities

People

  • A. J. Kent
  • A. V. Scherbakov
  • Andrei V. Akimov
  • D. A. Mazurenko
  • D. L. Fedorov

Organizations

  • Russian Academy of Sciences

Tags

Communities of Interest

  • Energy and Power Technologies
  • Materials and Manufacturing Processes

DTIC Thesaurus Topics

  • Argon Lasers
  • Band Gaps
  • Conduction Bands
  • Efficiency
  • Electrons
  • Energy Bands
  • Excitation
  • Intensity
  • Lasers
  • Optical Properties
  • Photoionization
  • Quantum Dot Lasers
  • Quantum Dots
  • Quantum Efficiency
  • Spectra
  • Spectral Lines
  • Technical Information Centers

Fields of Study

  • Materials science

Readers

  • Mathematics or Statistics
  • Quantum Dot Semiconductor Device Photonics and Graphene Optoelectronic Materials and THz Physics.

Technology Areas

  • Directed Energy
  • Directed Energy - Lasers
  • Quantum Computing