Photoluminescence Study of Electronic Structure of InAs Quantum Dots Grown on GaAs Vicinal Surfaces
Abstract
Pbotoluminescence (PL) study results of InAs/GaAs quantum dot (QD) arrays on vicinal GaAs (100) substrates at InAs thickness fixed to 1.8 monolayers are reported. It is shown that at T = 4 K PL peaks from QDs are blue-shifted and their full width at half maxima decreases as substrate misorientation angle towards vailous directions raises from 0 to 7 degrees. The intensity of this emssion band decreases at the temperature rise and at T > 8 K two bands with longer wavelength are clearly observed in PL spectra too. The excitation intensity and temperature dependences of PL spectra at 4-300 K indicate that observed PL spectra structure can be explained by the emission from both lowest and excited levels of QDs with average size 8-9 nm.
Document Details
- Document Type
- Technical Report
- Publication Date
- Jun 18, 1999
- Accession Number
- ADP012868
Entities
People
- A. B. Novikov
- B. V. Novikov
- R. B. Juferev
- S. Y. Verbin
- Y. Stepanov
Organizations
- Saint Petersburg State University