Photoluminescence Study of InP Nanoscale Islands Grown by MOVPE in InGaAs/GaAs Matrix

Abstract

Photoluminescence study (PL) of the self-assembling Stranski Krastanov growth of InP nanoscale islands embedded in In(0.49)Ga(0.51)P matrix by low pressure metal organic vapor phase epitaxy are presented. The temperature and the excitation level dependencies of the external quantum efficiency of these structures were invesflgated. InP nanoislands demonstrate a high quantum efficiency at 77 K and high PL wavelength temperature stability.

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Document Details

Document Type
Technical Report
Publication Date
Jun 18, 1999
Accession Number
ADP012869

Entities

People

  • D. A. Vinokurov
  • I. S. Tarasov
  • V. A. Kapitonov
  • Z. N. Sokolova

Organizations

  • Russian Academy of Sciences

Tags

Communities of Interest

  • Energy and Power Technologies

DTIC Thesaurus Topics

  • Efficiency
  • Excitation
  • Hard Copy
  • Low Temperature
  • Materials
  • Quantum Dot Lasers
  • Quantum Dots
  • Quantum Efficiency
  • Quantum Wells
  • Quantum Wires
  • Radiation
  • Semiconductors
  • Short Wavelengths
  • Spectra
  • Technical Information Centers
  • Thickness
  • Wetting

Fields of Study

  • Materials science

Readers

  • Quantum Dot Semiconductor Device Photonics and Graphene Optoelectronic Materials and THz Physics.
  • Semiconductor Device Technology

Technology Areas

  • Quantum Computing