Raman Study of the Topology of InAs/GaAs Self-Assembled Quantum Dots

Abstract

The topology of self assembled InAs/GaAs quantum dots was studied by resonant Raman scattering caused by the interface modes localized near the edges of the dots. Evidences were found that on both sides of the InAs layer containing the dots. their topologies show some resemblances. In addition. in the multilayered systems the evidence of the coalescence of the dots (which form vertical columns) in neighbor layers separated by the distance smaller than 25 monolayers was obtained.

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Document Details

Document Type
Technical Report
Publication Date
Jun 18, 1999
Accession Number
ADP012870

Entities

People

  • A. I. Toropov
  • G. Zanelatto
  • N. T. Moshegov
  • P. Basmaji
  • Y. A. Pusep

Organizations

  • Universidade Federal de São Carlos

Tags

Communities of Interest

  • Advanced Electronics

DTIC Thesaurus Topics

  • Diffraction
  • Electron Diffraction
  • Electron Microscopy
  • Heterojunctions
  • Intensity
  • Materials
  • Microscopes
  • Microscopy
  • Quantum Dots
  • Raman Scattering
  • Raman Spectra
  • Raman Spectroscopy
  • Scattering
  • Semiconductors
  • Spectra
  • Spectroscopy
  • Transmission Electron Microscopy

Readers

  • Quantum Dot Semiconductor Device Photonics and Graphene Optoelectronic Materials and THz Physics.

Technology Areas

  • Quantum Computing
  • Quantum Science - Quantum Dots