Transport Properties of InA1As/InGaAs/InP Graded nChannel Pseudomorphic High Electron Mobility Structures

Abstract

IWe studied the effect of the composition profile of pseudomorphic channel on transport properties of InGaAs/InAlAs structures. The increase in the effective separation of 2DEG from the heterointerface and the channel thickness was shown to be the key point to achieve the maximal mobility. The possibility to achieve excellent transport properties in structures with very thin InGaAs buffer layer is shown.

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Document Details

Document Type
Technical Report
Publication Date
Jun 18, 1999
Accession Number
ADP012874

Entities

People

  • A. E. Zhukov
  • A. R. Kovsh
  • A. Y. Egorov
  • N. A. Maleev
  • V. M. Ustinov

Organizations

  • Russian Academy of Sciences

Tags

Communities of Interest

  • Advanced Electronics

DTIC Thesaurus Topics

  • Crystal Lattices
  • Electron Gas
  • Electron Mobility
  • Electrons
  • Field Effect Transistors
  • Hard Copy
  • Heterojunctions
  • High Electron Mobility Transistors
  • Measurement
  • Mobility
  • Semiconductors
  • Technical Information Centers
  • Thickness
  • Transport Properties
  • Transport Ships
  • Two Dimensional

Fields of Study

  • Materials science

Readers

  • Semiconductor Device Technology

Technology Areas

  • Microelectronics