Coulomb Drag in Double Layer Systems with Correlated Disorder

Abstract

We study the effect of correlations between impurity potentials in different layers on the Coulomb drag in a double-layer semiconductor electron system. It is found that for strongly correlated potentials the drag in the diffusive regime is considerably enhanced as compared to conventional predictions. The appropriate experimental conditions are discussed, and the new experiments are suggested.

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Document Details

Document Type
Technical Report
Publication Date
Jun 18, 1999
Accession Number
ADP012875

Entities

People

  • A. G. Yashenkin
  • D. V. Khveshchenko
  • I. V. Gornyi

Organizations

  • Russian Academy of Sciences

Tags

Communities of Interest

  • Advanced Electronics

DTIC Thesaurus Topics

  • Diffusion Coefficient
  • Electrons
  • Equations
  • Geometry
  • Hard Copy
  • Impurities
  • Inelastic Scattering
  • Low Temperature
  • Magnetic Fields
  • Mean Free Path
  • Momentum Transfer
  • Nuclear Physics
  • Quantum Wells
  • Scattering
  • Standards
  • Technical Information Centers
  • Two Dimensional

Fields of Study

  • Physics

Readers

  • Fluid Dynamics.
  • Quantum spin resonance or Electron Paramagnetic Resonance spectroscopy.

Technology Areas

  • Microelectronics
  • Microelectronics - Graphene