Low Flicker Noise GaN/A1GaN Heterostructure Field Effect Transistors with Submicrometer Channel

Abstract

Development of high performance microwave technology requires detailed knowledge of the noise behavior of the devices. Particularly, it is important to know the value of flicker noise, e.g. 1/f noise, since this type of noise is the limiting figure for all kinds of HEMTs and MOSFETs. In this paper we report investigation of 1/f flicker noise in GaN/Al(1.15)Ga(0.85)N doped channel heterostructure field effect transistors (referred as CaN HFFT).

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Document Details

Document Type
Technical Report
Publication Date
Jun 18, 1999
Accession Number
ADP012879

Entities

People

  • A. Balandin
  • Rong Li
  • S. Cai
  • S. Morozov
  • Y. Dubrovskii

Organizations

  • University of California, Los Angeles

Tags

Communities of Interest

  • Advanced Electronics

DTIC Thesaurus Topics

  • Band Gaps
  • Carrier Mobility
  • Communication Systems
  • Compound Semiconductors
  • Electrical Engineering
  • Field Effect Transistors
  • Frequency
  • Heterojunctions
  • High Temperature
  • Mobile Communications
  • Mobility
  • Noise
  • Power Spectra
  • Semiconductors
  • Technical Information Centers
  • Thermal Conductivity
  • Transistors

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