1.3 UM Emission from 2 ML InAs Quantum Dots in a GaAs Matrix

Abstract

We studied dependence of structural and optical properties of the structures with InAs QDs embedded in (In,Ga,Al)As QW and demonstrated the possibility to reach the 1.3 micrometer emission range by using 2 ML InAs QDs as stressors for stimulated alloy decomposition.

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Document Details

Document Type
Technical Report
Publication Date
Jun 18, 1999
Accession Number
ADP012888

Entities

People

  • A. F. Tsatsul'nikov
  • A. R. Kovsh
  • N. A. Bedarev
  • N. N. Ledentsov
  • P. S. Kop'ev

Organizations

  • Russian Academy of Sciences

Tags

Communities of Interest

  • Advanced Electronics
  • Air Platforms

DTIC Thesaurus Topics

  • Band Gaps
  • Decomposition
  • Electron Microscopy
  • Emission
  • Energy Bands
  • Ground State
  • Intensity
  • Lasers
  • Materials
  • Optical Properties
  • Optoelectronic Devices
  • Quantum Dots
  • Quantum Wells
  • Spinodal Decomposition
  • Technical Information Centers
  • Thickness
  • Transmission Electron Microscopy

Fields of Study

  • Materials science

Readers

  • Quantum Dot Semiconductor Device Photonics and Graphene Optoelectronic Materials and THz Physics.

Technology Areas

  • Quantum Computing