QW Diode Laser Modulation by Lateral Gain Tailoring

Abstract

We present a new modulation technique by the control of latenil modal gain profile in four-terminal stepped-mesa diode laser. The simulation of the high frequency laser characteristics is performed on the basis of a computer model of stripe geometry diode laser which takes into account lateral effects. Modulaflon bandwidth of II GHz for ridge laser can be extended for 5 6 GHz by employing a newly developed stepped-mesa laser design. Moreover. nearly flat small signal modulation response with 3 dB bandwidth as high as 38 GHz can be obtained by making use of modulation of the lateral gain profile.

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Document Details

Document Type
Technical Report
Publication Date
Jun 18, 1999
Accession Number
ADP012889

Entities

People

  • J. V. Alekseeva
  • M. S. Shatalov
  • S. A. Gurevich

Organizations

  • Russian Academy of Sciences

Tags

Communities of Interest

  • Energy and Power Technologies

DTIC Thesaurus Topics

  • Bandwidth
  • Diodes
  • Electrodes
  • Frequency
  • Geometry
  • Laser Diodes
  • Lasers
  • Materials
  • Mesa Diodes
  • Modulation
  • Nanostructures
  • Optoelectronic Devices
  • Quantum Wells
  • Semiconductor Lasers
  • Semiconductors
  • Simulations
  • Technical Information Centers

Fields of Study

  • Physics

Readers

  • Optical Physics and Photonics.
  • Semiconductor Device Technology
  • Wave Propagation and Nonlinear Chaotic Dynamics.

Technology Areas

  • Directed Energy