Peculiarities of Radiative Recombination in BeMgZnSe/ZnCdSe Injection Lasers

Abstract

The wide band gap II-IV compounds are considered to be most suitable for manufacturing light emitting diodes (LED) and lasers emitting in a short wavelength range of visible spectrum. Now the utmost interest to such lasers is related to a potential opportunity for creation large-color-screen projection television. Recently. clue to the relatively fast progress in the improvement of the structural properties of (Mg,Zn,Cd)(S,Se) heterostructures several groups have reported on lasing both at low and room temperature (RT). But short lifetime of injection blue-green lasers at RT still limits their commercial application In this paper we report on study of the main characteristics of RT injection lasers based on BeMgZnSe/ZnCclSe separated confinement heterostructure (SCH).

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Document Details

Document Type
Technical Report
Publication Date
Jun 18, 1999
Accession Number
ADP012890

Entities

People

  • H. J. Lugauer
  • N. Y. Gordeev
  • P. S. Kop'ev
  • S V Ivanov
  • V. I. Kopchatov

Organizations

  • Russian Academy of Sciences

Tags

Communities of Interest

  • Advanced Electronics

DTIC Thesaurus Topics

  • Band Gaps
  • Current Density
  • Efficiency
  • Emission
  • Heterojunctions
  • Laser Diodes
  • Laser Mirrors
  • Laser Resonators
  • Lasers
  • Light Emitting Diodes
  • Nanostructures
  • Optoelectronic Devices
  • Quantum Efficiency
  • Quantum Wells
  • Short Wavelengths
  • Technical Information Centers
  • Visible Spectra

Fields of Study

  • Physics

Readers

  • Optical Physics and Photonics.
  • Semiconductor Device Technology

Technology Areas

  • Directed Energy