High Power Broadband Singlelobe InGaAsP/InP Superluminescent Diode

Abstract

Superluminescent diodes (SLDs) operating in 1300-1550 nm wavelength range with high output power (40 mW) wide spectra width (65 nm at FWHM) low modulation depth (< 1%) and singlelobe far field pattern have been fabricated. The optimum SLD is 10% tilted mesa-stripe construction with back absorption section based on broad gain profile InGaAsP/InP separate confinement double heterostructure.

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Document Details

Document Type
Technical Report
Publication Date
Jun 18, 1999
Accession Number
ADP012891

Entities

People

  • A. L. Stankevich
  • A. V. Lyutetskiy
  • A. Y. Leshko
  • N. A. Pikhtin
  • S. A. Shuravin

Organizations

  • Russian Academy of Sciences

Tags

DTIC Thesaurus Topics

  • Antireflection Coatings
  • Construction
  • Couplings
  • Efficiency
  • Emission
  • Emission Spectra
  • Fabrication
  • Far Field
  • Fibers
  • Laser Diodes
  • Lasers
  • Light Sources
  • Modulation
  • Optical Fibers
  • Optoelectronic Devices
  • Quantum Efficiency
  • Spectra

Fields of Study

  • Materials science

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