Peculiarities of Photoluminescence and Electroluminescence Properties of Spontaneously Formed Periodical InGaAsP/GaAs Structures

Abstract

Double heterostructures with spontaneously formed periodical (SFP) InGaAsP/GaAs active regions have been grown. The dependence of photoluminescence (PL) and electoluminescence (EL) properties of SFP InGaAsP/GaAs structures on excitation level and temperature have been investigated. From analysis of linear polarization rate spectral dependencies of PL SFP InGaAsP/GaAs structures it have been determined that domains with different solid phase composition have lattice mismatch (delta alpha) value of opposite sign. Threshold current density 50 A/cm2 at 77 K have been obtained in laser structures. Strong saturation of longwavelength emission hand intensity in room temperature PL and EL spectra with the increase of excitation level have been revealed.

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Document Details

Document Type
Technical Report
Publication Date
Jun 18, 1999
Accession Number
ADP012892

Entities

People

  • A. V. Lyutetskiy
  • D. A. Livshits
  • I. S. Tarasov
  • L. S. Vavilova
  • V. A. Kapitonov

Organizations

  • Russian Academy of Sciences

Tags

Communities of Interest

  • Energy and Power Technologies

DTIC Thesaurus Topics

  • Crystal Lattices
  • Current Density
  • Emission
  • Energy
  • Energy Bands
  • Excitation
  • Heterojunctions
  • Intensity
  • Laser Diodes
  • Linear Polarization
  • Materials
  • Optoelectronic Devices
  • Periodicals
  • Photoluminescence
  • Polarization
  • Solid Phases
  • Solid Solutions

Fields of Study

  • Materials science

Readers

  • Materials Science (Mechanical Engineering).
  • Materials Science and Engineering.
  • Quantum Dot Semiconductor Device Photonics and Graphene Optoelectronic Materials and THz Physics.

Technology Areas

  • Directed Energy
  • Directed Energy - Pulsed-Laser Deposition