The Plateau-Insulator Phase Transition in the Quantum Hall Regime

Abstract

We report experiments on the plateau-insulator transition in a low mobility In(0.53)Ga(0.47)As/InP heterostructure. An exponential law describes the resistance rho(xx) and we extract a critical exponent K=0.55+/-0.05 which is slightly different from the established value K=0.425+/-0.04 for the plateau transitions. Upon correction for the temperature dependence of the critical conductance sigma*(xx) our data indicate that the plateau-plateau and plateau-insulator transitions are in the same universality class.

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Document Details

Document Type
Technical Report
Publication Date
Jun 28, 1999
Accession Number
ADP012894

Entities

People

  • A. De Vissert
  • A. M. Pruisken
  • H. P. Wei
  • R. T. Van Schaijk
  • S. Oltshoorn

Organizations

  • University of Amsterdam

Tags

Communities of Interest

  • Advanced Electronics

DTIC Thesaurus Topics

  • Dielectrics
  • Electron Density
  • Electron Gas
  • Electrons
  • Equations
  • Experimental Design
  • Hard Copy
  • Heterojunctions
  • Magnetic Fields
  • Mobility
  • Phase Transformations
  • Potential Scattering
  • Resistance
  • Scattering
  • Technical Information Centers
  • Transitions
  • Two Dimensional

Fields of Study

  • Physics

Readers

  • Educational Psychology
  • Mathematics or Statistics
  • Semiconductor Device Technology

Technology Areas

  • Microelectronics
  • Microelectronics - Graphene
  • Quantum Computing