Real-Space Transfer of Electrons Under a Random Potential: A Possible Mechanism of Current Instability in Heterostructures

Abstract

A possible mechanism of lateral current instability observed in GaAs/AlGaAs heterostructures is proposed. The mechanism has to do with electron transfer in a heavily doped layer of AlGaAs. which is strongly compensated due to the presence of DX-centers. The heating of electrons in the percolation cluster net and the transfer of these electrons to the random potential wells results in the appearance of a hidden negative differential conductivity. The formation of an electric field domain brings about the conductivity collapse of the 2D electron gas. Experimental results proving this mechanism are given. technology assessment

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Document Details

Document Type
Technical Report
Publication Date
Jun 18, 1999
Accession Number
ADP012900

Entities

People

  • A. I. Chmil
  • I. V. Borisova
  • V. A. Sablikov
  • V. I. Borisov

Tags

Communities of Interest

  • Advanced Electronics
  • Materials and Manufacturing Processes

DTIC Thesaurus Topics

  • Amplitude
  • Collapse
  • Conductivity
  • Domain Walls
  • Electric Fields
  • Electron Density
  • Electron Gas
  • Electron Mobility
  • Electron Transfer
  • Electron Transitions
  • Electrons
  • Energy
  • Free Electrons
  • Heterojunctions
  • Quantum Wells
  • Semiconductors
  • Two Dimensional

Fields of Study

  • Materials science

Readers

  • Mathematical Modeling and Probability Theory.
  • Quantum Chemistry
  • Quantum Dot Semiconductor Device Photonics and Graphene Optoelectronic Materials and THz Physics.

Technology Areas

  • Microelectronics
  • Microelectronics - Graphene
  • Space
  • Space - Hall-Effect Thruster