Three-Dimensional (3D) Arrays of Silicon Nanosize Elements in the Void Sublattice of Artificial Opals

Abstract

Silicon is now the most important material in moderm solid state electronics. Regular systems of silicon nanoclusters containing up to 10(exp14)/cm3 elements have been fabricated in a sublattice of opal voids. Structural studies of samples by TEM. HREM and Raman measurements were carried out. The regular lattices of Pt-Si junctions were obtained and their current-voltage characteristics (CVC) were investigated.

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Document Details

Document Type
Technical Report
Publication Date
Jun 18, 1999
Accession Number
ADP012907

Entities

People

  • D. A. Kurdyukov
  • J. L. Hutchison
  • N. A. Feoktistov
  • V. G. Golubev
  • V. N. Bogomolov

Organizations

  • Russian Academy of Sciences

Tags

Communities of Interest

  • Advanced Electronics

DTIC Thesaurus Topics

  • Argon Lasers
  • Crystal Structure
  • Crystals
  • Diffraction
  • Electronics
  • Elements
  • Films
  • Measurement
  • Nanoparticles
  • Raman Spectra
  • Semiconductor Devices
  • Semiconductors
  • Silicon Dioxide
  • Solid State Electronics
  • Spectra
  • Thickness
  • Three Dimensional

Readers

  • Materials Science and Engineering.
  • Nanofabrication and Microfabrication.
  • Nanoscale Plasmonic Nanotechnology

Technology Areas

  • Microelectronics
  • Microelectronics - Graphene