Cross-Sectional Atomic Force Microscopy of ZnSe-Based Laser Diodes

Abstract

Cleaved facets of ZnBeMgSe-based lasers with different design of active region have been studied by means of the cross-sectional atomal (friction) force microscopy (AFM and LFM). A difference in function coefficients has been successfully exploited to image basic layers of the laser diodes. The Be-containing cladding layers and the waveguide area are revealed as regions of lower friction as compared to a GaAs substrate. Elastic strains accumulated at the layer boundaries are displayed via nanometer-high steps and undulations forming in the morphology of the cleaved facets. A remarkable reduction of the elastic strain in the active region containing a (Zn, Cd)Se quantum well has been found for the laser with the specially designed alternately-strained superlattice in the waveguide.

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Document Details

Document Type
Technical Report
Publication Date
Jun 18, 1999
Accession Number
ADP012910

Entities

People

  • A. N. Titkov
  • A. V. Ankudinov
  • P. S. Kop'ev
  • S V Ivanov
  • T. V. Shubina

Organizations

  • Russian Academy of Sciences

Tags

Communities of Interest

  • Advanced Electronics

DTIC Thesaurus Topics

  • Crystal Lattices
  • Detectors
  • Energy
  • Friction
  • Heterojunctions
  • Laser Diodes
  • Lasers
  • Materials
  • Microscopy
  • Nanostructures
  • Quantum Well Lasers
  • Quantum Wells
  • Semiconductors
  • Structural Properties
  • Substrates
  • Technical Information Centers
  • Topography

Fields of Study

  • Materials science

Readers

  • Optical Physics and Photonics.
  • Quantum Dot Semiconductor Device Photonics and Graphene Optoelectronic Materials and THz Physics.
  • Thin Film Deposition Science.

Technology Areas

  • Directed Energy
  • Directed Energy - Pulsed-Laser Deposition
  • Quantum Computing