Electronic Structure of Stacked Self-Organized InAs/GaAs Quantum Dots
Abstract
Capacitance and conductance-voltage characteristics have been measured at various frequencies and temperatures for a Schottky barrier structure containing three sheets of self-organized InAs quantum dots in an n-GaAs matrix. The capacitance of the structure consists of bulk and quantum dot contributions whereas the conductance mainly depends on the electron transfer out of the dots which is a function of the balance between measurement frequency and the thermionic emission rate of carriers from quantum dots. An analysis of the temperature dependent conductance of the structure gives information about the electronic structure and electron emission rate from the quantum dots.
Document Details
- Document Type
- Technical Report
- Publication Date
- Jun 18, 1999
- Accession Number
- ADP012913
Entities
People
- A. Levin
- A. Patane
- A. Polimeni
- L. Eaves
- P. N. Brunkov
Organizations
- Russian Academy of Sciences