Ionized States in the III-V Heterostructure Measured by Low-Temperature Capacitance Spectroscopy with Optical Excitation
Abstract
The photo-capacitance spectroscopy at low temperature is shown to be a sensitive technique for characterization of the semiconductor structures. This technique was applied to the study of III-V heterostructure with InP quantum dots. Several types of the deep states which can be photoionized were found in the structure. Some of this states shows sensitivity to photon energies far below the band gap of all materials involved.
Document Details
- Document Type
- Technical Report
- Publication Date
- Jun 18, 1999
- Accession Number
- ADP012915
Entities
People
- H. W. Rent
- S. Sugou
- V. Davydov
- Y. Masumoto
Organizations
- University of Tsukuba