X-Ray Reciprocal Space Mapping of Coincided As-Clusters/GaAs and delta-InAs/GaAs Superlattices Grown at Low Temperature

Abstract

X ray reciprocal space mapping was employed to assess the crystalline quality of the delta-InAs/GaAs superlattices grown at low temperatures and structural transformations related to formation of As-cluster/GaAs superlattices upon post-growth anneal.

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Document Details

Document Type
Technical Report
Publication Date
Jun 18, 1999
Accession Number
ADP012917

Entities

People

  • M. A. Putyato
  • N. N. Faleev
  • V. V. Chaldyshev
  • V. V. Preobrazhenskii

Organizations

  • Russian Academy of Sciences

Tags

Communities of Interest

  • Advanced Electronics

DTIC Thesaurus Topics

  • Annealing
  • Crystal Lattices
  • Crystals
  • Diffraction
  • Epitaxial Growth
  • Films
  • High Resolution
  • Low Temperature
  • Materials
  • Measurement
  • Molecular Beam Epitaxy
  • Optical Properties
  • Point Defects
  • Scattering
  • Superlattices
  • X Rays
  • X-Ray Diffraction

Readers

  • Acoustical Oceanography.
  • Electrochemical Engineering/ Fuel Cell Technologies
  • Thin Film Deposition Science.

Technology Areas

  • Space