Intersubband Resonant Polaron in Near-Surface delta-Doped GaAs

Abstract

The many-body features of tunnel spectra of Al/delta-GaAs are measured. The in-plane magnetic field shifts the 2D subband energies with thee diamagnetic shift of empty subband (E1) is greater than that of the filled subband (E0). The anticrossing of the terms E1(B) - h-bar(omega(Lo)) and E1(B) + h-bar(omega(Lo)) is observed where h-bar(omega(Lo)) is the LO phonon energy; zero energy of the subband bottoms is at Fermi level Ef. The effect is attributed to the strong intersubband polaron interaction at double resonance conditions.

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Document Details

Document Type
Technical Report
Publication Date
Jun 18, 1999
Accession Number
ADP012924

Entities

People

  • I. N. Kotel'nikov
  • V. A. Volkov

Tags

Communities of Interest

  • Advanced Electronics
  • Air Platforms

DTIC Thesaurus Topics

  • Crystal Lattice Vibrations
  • Electronics
  • Electrons
  • Fermi Levels
  • Low Temperature
  • Magnetic Fields
  • Metal-Semiconductor Junctions
  • Molecular Beam Epitaxy
  • Molecular Beams
  • Phonons
  • Quantum Tunneling
  • Quantum Wells
  • Spectra
  • Tunnels
  • Two Dimensional
  • Wave Functions

Fields of Study

  • Materials science

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