Investigation of the Characteristics of Interband Resonant Tunnelling Diodes with Modified Barriers

Abstract

This article investigated theoretically the I-V characteristics of the InAs/AlSb/GaSb and InAs/AlGaSb/GaSb RTS at room and liquid nitrogen temperature. It was shown that the values of the peak current density and P/V current ratio can be essentially enlarged by employing AlGaSb barriers instead of AlSb barriers. For the InAs/AlGaSb/GaSb RTS the values of P/V current ratio greater than all until now known experimental values for RTS were obtained.

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Document Details

Document Type
Technical Report
Publication Date
Jun 18, 1999
Accession Number
ADP012925

Entities

People

  • A. Zakharova
  • I. Lapushkin
  • V. Gerge

Organizations

  • Russian Academy of Sciences

Tags

Communities of Interest

  • Advanced Electronics

DTIC Thesaurus Topics

  • Agreements
  • Conduction Bands
  • Current Density
  • Electronics
  • Energy Bands
  • Energy Gaps
  • Fermi Levels
  • Materials
  • Nitrogen
  • Quantum Wells
  • Thickness
  • Valence
  • Valence Bands

Fields of Study

  • Materials science

Readers

  • Materials Science and Engineering.
  • Psychometric Testing or Psychological Assessment.
  • Semiconductor Device Technology