Spin and Energy Resolved Near-Threshold Electron Photoemission from Strained GaAs/GaAsP Heterostructure

Abstract

High resolution energy distribution curves (EDC) and a polarization versus energy distribution curves (PEDC) of the electrons photoemitted from strained GaAs/GaAsP are presented. We have found that in the vicinity of the photothreshold the polarization does not vary across the EDC both at room and 120 K temperatures of the cathode, which shows that no depolarization occurs in the band bending region (BBR). The EDC are interpreted in terms of the competition between the electron tunneling in vacuum and hopping between the states in the band bending region localized by the fluctuation potential.

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Document Details

Document Type
Technical Report
Publication Date
Jun 18, 1999
Accession Number
ADP012929

Entities

People

  • A. V. Subashiev
  • G. Lampel
  • H. J. Drouhin
  • Y. A. Mamaev
  • Y. P. Yashin

Organizations

  • Saint Petersburg State University

Tags

Communities of Interest

  • Energy and Power Technologies
  • Materials and Manufacturing Processes

DTIC Thesaurus Topics

  • Band Gaps
  • Conduction Bands
  • Distribution Curves
  • Electron Emission
  • Electron Energy
  • Electron Mobility
  • Electronic States
  • Electrons
  • Emission
  • Energy
  • Energy Bands
  • Excitation
  • High Energy
  • High Resolution
  • Photoexcitation
  • Polarization
  • Quantum Yields

Fields of Study

  • Materials science
  • Physics

Readers

  • Astronomy and Astrophysics.
  • Materials Science (Mechanical Engineering).
  • Quantum spin resonance or Electron Paramagnetic Resonance spectroscopy.

Technology Areas

  • Microelectronics