Symmetry of the GaAs Crystal with delta-Doing Si Layers and its Influence on the Band Structure

Abstract

The GaAs crystals are shown to lower symmetry from T(d) to D(2d) or C(2v) when inserting a delta-layer with odd or even number of Si planes respectively. These symmetry changes correspond to uniaxial or plane distoition of the GaAs lattice in the neighbourhood of a delta-layer. The band shifts of GaAs induced by the insertiOn of delta-layers are estimated.

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Document Details

Document Type
Technical Report
Publication Date
Jun 18, 1999
Accession Number
ADP012930

Entities

People

  • M. F. Kokorev
  • P. Tronc
  • Yu. E. Kitaev

Organizations

  • Russian Academy of Sciences

Tags

Communities of Interest

  • Air Platforms

DTIC Thesaurus Topics

  • Band Gaps
  • Band Structures
  • Bulk Materials
  • Conduction Bands
  • Crystal Lattices
  • Crystal Structure
  • Crystals
  • Distortion
  • Electronics
  • Energy Bands
  • Physical Properties
  • Quantum Properties
  • Semiconductors
  • Spin-Orbit Interaction
  • Symmetry
  • Three Dimensional

Readers

  • Calculus or Mathematical Analysis
  • Materials Science and Engineering.
  • Semiconductor Device Technology