Observation of Negative Persistent Photoconductivity in GaAs delta-Doped by Sn

Abstract

GaAs delta-doped structures with various Sn doping densities have been grown on vicinal substrates. The observed at low temperatures negative persistent photoconductivity in heavily delta-doped samples is connected with increase of electron concentration and decrease of electron mobilities. Such effect may occur when the correlations among charged shallow donors and DX- centers are destroyed via photoexcitation of electron out of the DX- centers. The observed in samples with electron concentration less than 8 x 10(exp12)/cm2 effect of positive persistent photoconductivity may be explained by spatial separation of photogenerated carriers.

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Document Details

Document Type
Technical Report
Publication Date
Jun 18, 1999
Accession Number
ADP012931

Entities

People

  • A. V. Demin
  • A. V. Golikov
  • R. A. Lunin
  • V. A. Kulbachyinskii
  • V. G. Kytin

Tags

Communities of Interest

  • Advanced Electronics
  • Air Platforms

DTIC Thesaurus Topics

  • Conduction Bands
  • Conductivity
  • Electron Density
  • Electron Holes
  • Electron Mobility
  • Electrons
  • Energy Levels
  • Illumination
  • Long Wavelengths
  • Low Temperature
  • Mobility
  • Photoconductivity
  • Radiation
  • Resistance
  • Short Wavelengths
  • Substrates

Fields of Study

  • Materials science

Readers

  • Materials Science and Engineering.
  • Materials Science.

Technology Areas

  • Microelectronics