Effective-Mass Approximation for Electrons in Ultrathin Heterolayers

Abstract

It was shown that the usually employed model of rectangular potentials in the effectiveness equations generally fail for ultrathin layers of width of the order of the lattice constant. There are additional terms. which play minor role for thick quantum wells and barriers. that may have drastic influence on electron states in semiconductor nanostructures with ultrathin layers. The terms are defined with details of the microscopic structure of heterointerfaces. It was shown that allowance for these terms may turn a barrier layer into an effective quantum well binding electrons, and vice versa.

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Document Details

Document Type
Technical Report
Publication Date
Jun 18, 1999
Accession Number
ADP012932

Entities

People

  • E. E. Takhtamirov
  • V. A. Volkov

Tags

Communities of Interest

  • Advanced Electronics

DTIC Thesaurus Topics

  • Brillouin Zones
  • Conduction Bands
  • Crystal Growth
  • Crystals
  • Eigenvalues
  • Electronics
  • Electrons
  • Energy
  • Energy Bands
  • Equations
  • Heterojunctions
  • Materials
  • Nanostructures
  • Potential Energy
  • Quantum Wells
  • Semiconductors
  • Step Functions

Fields of Study

  • Physics

Readers

  • Electromagnetic Wave Scattering and Antenna Radiation Engineering
  • Quantum Dot Semiconductor Device Photonics and Graphene Optoelectronic Materials and THz Physics.
  • Thin Film Deposition Science.

Technology Areas

  • Microelectronics
  • Quantum Computing