Light-Emitting Nanocomposite Films on the Base of Silicon Nitride and Silicon Oxynitride Layers
Abstract
The silicon nanostructures on the base of SiN(x) and SiN(x)O(y) with room temperature luminescence in visible part of spectrum were obtained. The regimes of deposition and annealing allowed adjusting excess of Si and structure of layers and essentially influenced on their electrical, optical and luminescent properties. The mechanisms of photo and electroluminescence and paths of the Si light source realization are discussed.
Document Details
- Document Type
- Technical Report
- Publication Date
- Jun 18, 1999
- Accession Number
- ADP012935
Entities
People
- A. P. Chernushich
- M. I. Elinson
- V. A. Jitov
- V. G. Baru
- V. I. Pokalyakin