Second Harmonic Generation in Porous Silicon Multilayer Periodic Structures

Abstract

In tne paper second harmonic (SH) generation in a photonic bandgap structure was investigated. The intensity of SH from a multilayer structure exceeds the intensity of SH from both homogeneous layer of porous silicon and a single crystal silicon (100) substrate. The SH generation efficiency was found to be sensitive to parameters of photonic bandgap structures. The dependence of the SH signal on the azimuthal rotation angle is isotropic. SH radiation is polarized in the plane of incidence. The SH intensity is a nonmonotonic function of the angle of incidence, reaching its maximal value at the angle of incidence corresponding to the minimal phase mismatch in the multilayer periodic structure.

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Document Details

Document Type
Technical Report
Publication Date
Jun 18, 1999
Accession Number
ADP012936

Entities

People

  • A. B. Fedotov
  • L. A. Golovan
  • M. G. Lisachenko
  • N. I. Koroteev
  • P. K. Kashkarov

Organizations

  • Moscow State University

Tags

Communities of Interest

  • Advanced Electronics

DTIC Thesaurus Topics

  • Angle Of Incidence
  • Crystals
  • Current Density
  • Demographic Cohorts
  • Efficiency
  • Intensity
  • Laser Pulses
  • Materials
  • Nanoparticles
  • Nanostructures
  • Physics
  • Radiation
  • Reflectors
  • Refractive Index
  • Second Harmonic Generation
  • Single Crystals

Fields of Study

  • Physics

Readers

  • Optical Physics and Photonics.
  • Seismology
  • Semiconductor Device Technology