The Influence of Deposition Parameters on the Structure of Nanocrystalline Silicon

Abstract

Nanocrystalline silicon films have been produced by PECVD metbod in SiH4 t H2 gas mixtures. Raman spectral IR absorption and absorption edge of the films have been investigated in a function of such deposition parameters as the gas dilution ratio H2O contamination the deposition temperature (T(d)) and the material of the substrate. The study of IR spectra has showed the presence of bonded hydrogen, with the total concentration (CH) varying from 4 to 13 at.%. The analysis of Raman spectra has revealed that the films contain nanocrystallites embedded in amorphous matrix.

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Document Details

Document Type
Technical Report
Publication Date
Jun 18, 1999
Accession Number
ADP012938

Entities

People

  • E. I. Terukov
  • G. Weiser
  • K. V. Koughia
  • V. K. Kudoyarova
  • V. Y. Davydov

Organizations

  • Russian Academy of Sciences

Tags

Communities of Interest

  • Advanced Electronics

DTIC Thesaurus Topics

  • Absorption
  • Absorption Coefficients
  • Chemical Vapor Deposition
  • Crystallites
  • Crystals
  • Dilution
  • Hydrogen
  • Materials
  • Nanocrystals
  • Raman Spectra
  • Raman Spectroscopy
  • Single Crystals
  • Spectra
  • Spectroscopy
  • Substrates
  • Thermal Conductivity
  • Vapor Deposition

Readers

  • Materials Science and Engineering.
  • Mathematics or Statistics
  • Thin Film Deposition Science.