Quantum Confined Pockels Effect and Optical Polarized Spectroscopy of Interfaces in Type-II Heterostructures

Abstract

We report on a strong enhancement of the Pockels effect in direct-gap type-II ZnSe/BeTe heterostructures. The effect has been found experimentally and analyzed theoretically. In quantum well structures with equivalent interfaces, say the Zn-Te and Te-Zn interfaces, the unbiased sample is optically isotropic in the plane perpendicular to the growth direction. In the presence of an electric field the electron and hole wave functions are pushed towards one of the interfaces and off from the other, as a result the balance is broken and the photoluminescence polarization becomes nonzero and reaches 70-80 in moderate electric fields. To desciibe the field-induced in-plane anisotropy in type-II heterostructures, a theoretical model has been developed which is based on the representation of optical matrix elements in the microscopical tight binding model.

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Document Details

Document Type
Technical Report
Publication Date
Jun 18, 1999
Accession Number
ADP012940

Entities

People

  • A. V. Plantonov
  • D. R. Yakovlev
  • E.. L. Ivchenko
  • M. Keim
  • V. P. Kochereshko

Organizations

  • Russian Academy of Sciences

Tags

Communities of Interest

  • Air Platforms

DTIC Thesaurus Topics

  • Anisotropy
  • Bulk Materials
  • Chemical Bonds
  • Electric Fields
  • Electron Holes
  • Electrons
  • Emitters
  • Energy Bands
  • Heterojunctions
  • Linear Polarization
  • Materials
  • Optical Phenomena
  • Orientation (Direction)
  • Pockels Effect
  • Polarization
  • Quantum Wells
  • Transitions

Fields of Study

  • Materials science
  • Physics

Readers

  • Materials Science and Engineering.
  • Quantum Dot Semiconductor Device Photonics and Graphene Optoelectronic Materials and THz Physics.

Technology Areas

  • Microelectronics
  • Microelectronics - Graphene
  • Quantum Computing
  • Quantum Science - Quantum Dots