Electric Field Induced Interference Impurity Ionization in Coupled Quantum Wells

Abstract

The dramatic change of Si donor impurity ionization energy was experimentally found in GaAs/AlGaAs double well structure. This effect accompanies the rearrangement of electronic wave function in electric field. With less than 1 V variation of the bias on the structure the impurity ionization energy falls to zero from 15.5 meV. The Stark effect should cause the variation of this parameter no more than 3 meV.

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Document Details

Document Type
Technical Report
Publication Date
Jun 18, 1999
Accession Number
ADP012942

Entities

People

  • I. P. Kazakov
  • N. V. Kornyakov
  • V. V. Kapaev
  • Y. A. Aleshchenko
  • Y. V. Kopaev

Organizations

  • Russian Academy of Sciences

Tags

Communities of Interest

  • C4I
  • Energy and Power Technologies

DTIC Thesaurus Topics

  • Atoms
  • Crystal Structure
  • Electric Fields
  • Electron Transitions
  • Electronic States
  • Electrons
  • Ground State
  • Impurities
  • Intensity
  • Ionization
  • Low Temperature
  • Poisson Equation
  • Quantum Wells
  • Spectra
  • Stark Effect
  • Transitions
  • Wave Functions

Fields of Study

  • Materials science

Readers

  • Pulsed Power and Plasma Physics.
  • Quantum Dot Semiconductor Device Photonics and Graphene Optoelectronic Materials and THz Physics.

Technology Areas

  • Microelectronics
  • Quantum Computing