In-Plane Linear Polarization of Luminescence and Level Anticrossings in GaAs/A1As Superlattices and Quantum Wells

Abstract

In plane linear polarization of luminescence under above-band-gap excitation was investigated in type II and type I GaAs/AlAs (001) quantum wells and superlattices together with the study of level anticrossing and ODMR. Correlation of such polarization with the preferential exciton localization was found and discussed in terms of coexistence of excitons and separately localized electrons and holes. The influence of the substrate temperature on the interface quality was revealed in type I GaAs/AlGaAs quantum wells from level-anticrossing spectroscopy.

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Document Details

Document Type
Technical Report
Publication Date
Jun 18, 1999
Accession Number
ADP012946

Entities

People

  • A. Hofsteatter
  • A. Scharmann
  • B. K. Meyer
  • G. Baranov
  • N. G. Romanov

Organizations

  • Russian Academy of Sciences

Tags

Communities of Interest

  • Air Platforms

DTIC Thesaurus Topics

  • Band Gaps
  • Circular Polarization
  • Electrons
  • Emission
  • Emission Spectra
  • Energy Levels
  • Excitons
  • Linear Polarization
  • Long Wavelengths
  • Luminescence
  • Magnetic Fields
  • Magnetic Resonance
  • Polarization
  • Quantum Wells
  • Short Wavelengths
  • Spectra
  • Spectroscopy

Fields of Study

  • Materials science

Readers

  • Materials Science and Engineering.
  • Quantum Dot Semiconductor Device Photonics and Graphene Optoelectronic Materials and THz Physics.

Technology Areas

  • Microelectronics
  • Microelectronics - Graphene
  • Quantum Computing