Effect of Relaxation Processes on Auger Recombination in Semiconductor Quantum Wells

Abstract

In this paper we study the effect of carrier relaxation processes on Auger recombination in semiconductor quantum wells. It is shown that the calculation in the framework of the conventional perturbation theory is not applicable in the case of narrow wells and wires because of its divergence. Therefore a more rigid Green function techniques is used. The relaxation processes are shown to increase Auger recombination coefficient. however their influence becomes weaker with decrease of the QW width. The transition from the QW to the bulk case is explicitly carried out.

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Document Details

Document Type
Technical Report
Publication Date
Jun 18, 1999
Accession Number
ADP012954

Entities

People

  • Anatoli Polkovnikov
  • E. B. Dogonkine
  • G. G. Zegrya

Organizations

  • Russian Academy of Sciences

Tags

Communities of Interest

  • Materials and Manufacturing Processes

DTIC Thesaurus Topics

  • Band Gaps
  • Coefficients
  • Conduction Bands
  • Electron Density
  • Electron Scattering
  • Electrons
  • Energy Bands
  • Energy Gaps
  • Energy Levels
  • Ground State
  • High Temperature
  • Perturbation Theory
  • Perturbations
  • Quantum Wells
  • Scattering
  • Semiconductors
  • Wave Functions

Fields of Study

  • Materials science

Readers

  • Calculus or Mathematical Analysis
  • Quantum Dot Semiconductor Device Photonics and Graphene Optoelectronic Materials and THz Physics.

Technology Areas

  • Microelectronics
  • Quantum Computing