Magnetooptics of the Excitonic States in the Shallow GaAs/AlGaAs Quantum Wells

Abstract

Photoluminescence (PL) and photoluminescence excitation (PLE) spectra of asymmetric two-well GaAs/Al(0.05)Ga(0.95)As structures with tunnel-isolated shallow quantum wells. In magnetic field oriented both perpendicular and parallel to the layers were studied at liquid helium temperatures. In the PLE spectra we observed tbe lines which most probably correspond to absorption by excitons formed by a QW localized carrier and a free carrier of opposite sign attracted by the Coulomb force. Clear indication of effective excitation transfer between the wide and narrow wells of the structure was observed. which is apparently due to the resonant excitation of the light-hole excitons in the wide well by recombination radiation from heavy-hole excitons in the narrow well.

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Document Details

Document Type
Technical Report
Publication Date
Jun 18, 1999
Accession Number
ADP012958

Entities

People

  • B. Etienne
  • M. L. Skorikov
  • N. N. Sibeldin
  • V. A. Ysvetkov

Organizations

  • Russian Academy of Sciences

Tags

Communities of Interest

  • Advanced Electronics

DTIC Thesaurus Topics

  • Charge Carriers
  • Charged Particles
  • Couplings
  • Electronic States
  • Electrons
  • Excitation
  • Excitons
  • Magnetic Fields
  • Nanostructures
  • Photoluminescence
  • Quantum Wells
  • Quasiparticles
  • Radiation
  • Solid State Physics
  • Spectra
  • Three Dimensional
  • Transitions

Fields of Study

  • Materials science

Readers

  • Fluid Dynamics.
  • Quantum Dot Semiconductor Device Photonics and Graphene Optoelectronic Materials and THz Physics.

Technology Areas

  • Microelectronics
  • Quantum Computing