Luminescence of HH-Excitons in GaAs/GaAlAs Superlattices Under Resonant Excitation

Abstract

The spectra and kinetics of photolumnescence decay of GaAs/GaAlAs superlattice were measured under resonant excitation in the temperature range of 5 - 40 K. A narrow peak resonant with the frequency of excitation radiation was found in the luminescence spectra. This peak can be attributed to the resonant luminescence of excitons. The exciton radiance recombination rate and its dependence on temperature were determined experimentally.

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Document Details

Document Type
Technical Report
Publication Date
Jun 18, 1999
Accession Number
ADP012961

Entities

People

  • I. Y. Gerlovin
  • S. A. Eliseev
  • V. V. Ovsyankin
  • Y. K. Dolgikh
  • Y. P. Efimov

Organizations

  • Saint Petersburg State University

Tags

Communities of Interest

  • Energy and Power Technologies

DTIC Thesaurus Topics

  • Crystal Lattices
  • Excitation
  • Frequency
  • Intensity
  • Kinetics
  • Low Temperature
  • Luminescence
  • Measurement
  • Quantum Dots
  • Quantum Wells
  • Quasiparticles
  • Radiation
  • Relaxation Time
  • Resonant Frequency
  • Scattering
  • Superlattices
  • Wave Mixing

Fields of Study

  • Materials science

Readers

  • Materials Science and Engineering.
  • Semiconductor Device Technology

Technology Areas

  • Microelectronics