Emission and Amplification of Mid-Infrared Radiation in Quantum Well Structures Under Generation of Near-Infrared Light
Abstract
Physical principle of population inversion of electrons between subbands under the electron hole pair injection into the i-region of p-i-n heterostructure with quantum wells is proposed. The important features of this principle are the simultaneous generation of intraband (h nu somewhat > E(g)) radiation of near-infrared range and presence of metastable level. Spontaneous mid-infrared radiation (Lambda + approx 10 ... 20 micrometers) is observed from laser structures with InGaAs/GaAs quantum wells. The near-infrared laser diode structures with composite waveguide confining both near-infrared and mid-infrared radiation is designed and grown.
Document Details
- Document Type
- Technical Report
- Publication Date
- Jun 18, 1999
- Accession Number
- ADP012964
Entities
People
- D. A. Firsov
- L. E. Vorobjev
- V. A. Shalygin
- V. N. Tulupenko
- Z. L. Alferov
Organizations
- Peter the Great Saint Petersburg State Polytechnical University