New Type Intraband Quantum Well Laser

Abstract

A universal intraband IR laser scheme on Gamma-Gamma and X-Gamma valley transitions in GaAs- AlAs-like MQW systems under hot electron transfer from Gamma valley in GaAs to X valleys in AlAs in a high lateral electric field is proposed evaluated and simulated by the Monte-Carlo method. For a GaAs-AlAs MQW structure discussed the lasing electric field thresholds were found to be 8 kV/cm and 14 kV/cm with amplification coefficient of 300/cm and 500/cm near the th%resholds at 80 K and 300 K at wavelength lambda = approx 9 micromaters.

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Document Details

Document Type
Technical Report
Publication Date
Jun 18, 1999
Accession Number
ADP012965

Entities

People

  • A. A. Andronov
  • E. V. Demidov
  • V. Y. Aleshkin

Organizations

  • Russian Academy of Sciences

Tags

Communities of Interest

  • Advanced Electronics
  • Air Platforms

DTIC Thesaurus Topics

  • Absorption Coefficients
  • Amplification
  • Brillouin Zones
  • Coefficients
  • Electric Fields
  • Energy Bands
  • Lasers
  • Monte Carlo Method
  • Quantum Well Lasers
  • Quantum Wells
  • Scattering
  • Semiconductor Lasers
  • Semiconductors
  • Simulations
  • Transitions
  • Wave Functions
  • Waves

Fields of Study

  • Materials science

Readers

  • Quantum Dot Semiconductor Device Photonics and Graphene Optoelectronic Materials and THz Physics.
  • Spectroscopy.

Technology Areas

  • Directed Energy
  • Microelectronics
  • Quantum Computing
  • Quantum Science - Quantum Dots