Photocurrent Under Carrier Tunneling in GaAs/AlGaAs coupled Quantum Wells Embedded in p-i-n Heterostructure

Abstract

Photocurrent-bias characteristics of coupled quantum well photodiode were studied at different intensities of illuminating light with various spectral range. The optimal conditions for observation of THz radiation emission from such device are established.

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Document Details

Document Type
Technical Report
Publication Date
Jun 18, 1999
Accession Number
ADP012969

Entities

People

  • A. M. Tomlinson
  • D. A. Firsov
  • I. E. Titkov
  • L. E. Vorobjev
  • V. A. Shalygin

Organizations

  • Peter the Great Saint Petersburg State Polytechnical University

Tags

Communities of Interest

  • Energy and Power Technologies

DTIC Thesaurus Topics

  • Absorption
  • Education
  • Emission
  • Experimental Data
  • Heterojunctions
  • Intensity
  • Light Sources
  • Molecular Beam Epitaxy
  • Molecular Beams
  • Optical Fibers
  • Optical Filters
  • Optical Pumping
  • Photodiodes
  • Quantum Tunneling
  • Quantum Wells
  • Radiation
  • Universities

Fields of Study

  • Materials science

Readers

  • Quantum Dot Semiconductor Device Photonics and Graphene Optoelectronic Materials and THz Physics.
  • Semiconductor Device Technology

Technology Areas

  • Directed Energy
  • Quantum Computing