Single Electron Transistor of Stack Design as Ultrasensitive Electrometer

Abstract

We have fabricated and studied the noise characteristics of the stack-junction Single Electron Tunneling (SET) electrometer in which the island was completely screened from a dielectiic substrate. The noise figure of the device was found to be suprisingly low: an equivalent charge noise was less than 8 x 10(exp-6) e/sq.rt.Hz at the frequency 10 Hz or. in energy units, 30 h-bar.

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Document Details

Document Type
Technical Report
Publication Date
Jun 18, 1999
Accession Number
ADP012972

Entities

People

  • A. B. Zorin
  • D. E. Presnov
  • J. Niemeyer
  • V. A. Krupenin

Organizations

  • Moscow State University

Tags

DTIC Thesaurus Topics

  • Electrodes
  • Electrometers
  • Electron Beam Lithography
  • Electrons
  • Experimental Data
  • Fabrication
  • Frequency
  • Geometry
  • Materials
  • Measurement
  • Modulation
  • Nanostructures
  • Resistance
  • Shot Noise
  • Substrates
  • Transistors
  • Tunnels

Fields of Study

  • Physics

Readers

  • Electrical Engineering
  • Nanofabrication and Microfabrication.
  • Optical Physics and Photonics.

Technology Areas

  • Microelectronics
  • Microelectronics - Microelectromechanical Systems