Semiconductor Nanostructures Grown in Production MOVPE Reactors
Abstract
Since the invention of the Planetary Reactors a reliable tool for mass production of various III-V compounds and nanostructures based on MOCVD growth is existing. These reactors have proven to grow extremely uniform films together with a highly efficient utilization of the precursors. Their main features are: an inductive heating system with extremely low thermal mass for precise and fast heating, high flexibility in the reactor size (15 x 2". 35 x 2" to 9 x 4" wafer load) and the option to use a fully automated cassette-to-cassette wafer loading system. The benefits of this design are very short cycle times, extreme run-to-run stability and even further reduced cost of ownership. Uniformity of thickness, luminescence intensity and composition of the most important III-V compounds such as GaInP GaInAsP and AlGaInP as well as GaN based materials are shown.
Document Details
- Document Type
- Technical Report
- Publication Date
- Jun 18, 1999
- Accession Number
- ADP012977
Entities
People
- Michael Heuken