Vicinal Surface as a Tool for QD Control: InAs on GaAs

Abstract

We have found that the application of GaAs(OOI) substrates misoriented to the 010 direction in conventional MBE growth gives an effective tool for the independent control of InAs QDs density and size permits to improve the QDs sizes dispersion. This possibility originates from special surface patterning which appear on misonented substrates and may be used in the MlE growth of different types of QDs.

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Document Details

Document Type
Technical Report
Publication Date
Jun 18, 1999
Accession Number
ADP012978

Entities

People

  • V. P. Evtikhiev

Organizations

  • Russian Academy of Sciences

Tags

Communities of Interest

  • Energy and Power Technologies

DTIC Thesaurus Topics

  • Coalescence
  • Current Density
  • Diffusion
  • Heat Of Activation
  • Heterojunctions
  • High Density
  • Materials
  • Migration
  • Molecular Beam Epitaxy
  • Molecular Beams
  • Monte Carlo Method
  • Nanostructures
  • Quantum Dot Lasers
  • Quantum Dots
  • Simulations
  • Spectra
  • Substrates

Fields of Study

  • Materials science

Readers

  • Quantum Dot Semiconductor Device Photonics and Graphene Optoelectronic Materials and THz Physics.
  • Statistical inference.