Using of Self-Formed Semiconductor Micro- and Nanotubes as a Precise Etch Mask

Abstract

Concepts of making precise etch mask using self-formed tubes have been proposed and realized. The InGaAs/GaAs mask-tubes diameter have been precisely controlled in the range from 4 micrometers to 8 nanometers. Using reactive ion etching and these mask-tubes. a mesa-structure and a groove on the GaAs substrate were fabricated.

Open PDF

Document Details

Document Type
Technical Report
Publication Date
Jun 18, 1999
Accession Number
ADP012979

Entities

People

  • A. V. Chehovskiy
  • L. A. Nenasheva
  • V. Y. Prinz

Organizations

  • Russian Academy of Sciences

Tags

Communities of Interest

  • Advanced Electronics

DTIC Thesaurus Topics

  • Diameters
  • Electron Beams
  • Electron Microscopes
  • Electrons
  • Etching
  • Fabrication
  • Fullerenes
  • Metal Films
  • Microscopes
  • Nanofabrication
  • Nanostructures
  • Planar Structures
  • Reactive Gases
  • Reactive Ion Etching
  • Semiconductor Physics
  • Semiconductors
  • Substrates

Readers

  • Nanofabrication and Microfabrication.
  • Quantum Dot Semiconductor Device Photonics and Graphene Optoelectronic Materials and THz Physics.

Technology Areas

  • Microelectronics
  • Microelectronics - Graphene