Growth and Characterization InGaN/GaN Nanoscale Heterostructures

Abstract

The intensity of InGaN related photoluminescence increased more than an order of magnitude for structures with intermediate InGaN layer. The growth of the InGaN/GaN SL structures was realized by periodically alteration of the growth temperate in the range between 730 C and 860 C. Leasing under conditions of optical pumping was obtained both in directions peipendicular and parallel to sample surface.

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Document Details

Document Type
Technical Report
Publication Date
Jun 18, 1999
Accession Number
ADP012980

Entities

People

  • A. S. Usikov
  • A. V. Sakharov
  • V. A. Semenov
  • W. V. Lundin
  • М. В. Байдакова

Organizations

  • Russian Academy of Sciences

Tags

Communities of Interest

  • Advanced Electronics
  • Air Platforms

DTIC Thesaurus Topics

  • Electron Microscopes
  • Excitation
  • Flow
  • Gas Flow
  • High Temperature
  • Hydrogen
  • Lasers
  • Light Sources
  • Low Temperature
  • Materials
  • Measurement
  • Optical Pumping
  • Quantum Wells
  • Scanning Electron Microscopes
  • Spectra
  • Substrates
  • X-Ray Diffraction

Fields of Study

  • Materials science

Readers

  • Quantum Dot Semiconductor Device Photonics and Graphene Optoelectronic Materials and THz Physics.
  • Semiconductor Device Technology