Growth of Self-Assembled GeSi Islands with Narrow Size Distribution on Si (001)

Abstract

The results of the investigation of the self-assembled Ge islands growth on Si (001) at 700 C are presented. The evolution of the islands shape from hut to dome islands is studied. For Ge coverage of 11 monolayers a narrow distribution of islands sizes is obtained which allowed to use the Raman spectroscopy and X-ray diffraction for determination of Ge content and residual strain in islands.

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Document Details

Document Type
Technical Report
Publication Date
Jun 18, 1999
Accession Number
ADP012982

Entities

People

  • A. V. Novikov
  • I. V. Dolgov
  • N. V. Vostokov
  • Y. N. Drozdov
  • Z. F. Krasil'nik

Organizations

  • Russian Academy of Sciences

Tags

Communities of Interest

  • Energy and Power Technologies

DTIC Thesaurus Topics

  • Diffraction
  • Diffractometers
  • Energy
  • Mass Spectrometers
  • Measurement
  • Nanostructures
  • Optical Properties
  • Physics
  • Raman Scattering
  • Raman Spectra
  • Raman Spectroscopy
  • Scattering
  • Spectra
  • Spectroscopy
  • Three Dimensional
  • X Rays
  • X-Ray Diffraction

Readers

  • Oceanography.
  • Quantum Dot Semiconductor Device Photonics and Graphene Optoelectronic Materials and THz Physics.
  • Structural Health Monitoring of Composite Structures.