Volmer-Webber Epitaxial Growth of InAs Nanoscale Islands on Si(100)

Abstract

InAs/Si(100) heteroepitaxial growth is studied with reflection high energy electron diffraction and scanning electron microscopy methods. It is shown that under certain growth conditions the formation of InAs nanoscale islands on Si(100) surface occurs via Volmer Webber growth mechanism.

Open PDF

Document Details

Document Type
Technical Report
Publication Date
Jun 18, 1999
Accession Number
ADP012984

Entities

People

  • G. E. Cirlin
  • N. K. Polyakov
  • V. G. Dubrovskii
  • V. N. Petrov
  • Y. B. Samsonenko

Organizations

  • Russian Academy of Sciences

Tags

Communities of Interest

  • Advanced Electronics

DTIC Thesaurus Topics

  • Electron Diffraction
  • Electron Microscopy
  • Electrons
  • Epitaxial Growth
  • Fiber Optics
  • High Energy
  • Materials
  • Microscopy
  • Molecular Beams
  • Monomolecular Films
  • Nanostructures
  • Optics
  • Quantum Dots
  • Scanning Electron Microscopy
  • Substrates
  • Tape Recorders
  • Thickness

Fields of Study

  • Materials science

Readers

  • Nanoscale Plasmonic Nanotechnology
  • Quantum Dot Semiconductor Device Photonics and Graphene Optoelectronic Materials and THz Physics.
  • Thin Film Deposition Science.

Technology Areas

  • Microelectronics
  • Microelectronics - Graphene