Growth of InAs Self-Assembled Islands on Ge

Abstract

This is the first observation and characterization of self-assembled InAs islands on Ge. Our comparison of islanding dynamics in this system with that of InAs islands on GaAs substantiated the importance of other factors besides the epitaxial strain state, such as surface diffusion, in island formation and evolution.

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Document Details

Document Type
Technical Report
Publication Date
Jun 18, 1999
Accession Number
ADP012985

Entities

People

  • Glenn S. Solomon
  • J. S. Harris Jr.
  • S. A. Komarov

Organizations

  • Stanford University

Tags

Communities of Interest

  • Advanced Electronics

DTIC Thesaurus Topics

  • Diffusion
  • Dynamics
  • Kinetics
  • Materials
  • Materials Laboratories
  • Monomolecular Films
  • Nanomaterials
  • Nanostructures
  • New York
  • Observation
  • Personal Information Managers
  • Physics
  • Physics Laboratories
  • Substrates
  • Universities

Fields of Study

  • Materials science

Readers

  • Naval Engineering and Maritime Security
  • Structural Dynamics.
  • Thin Film Deposition Science.