Nitrogen Chemisorbed Layers on GaAs(100): Formation, Properties, Applications
Abstract
We propose a novel wet chemical technology to form continuous nitride films on GaAs (100). For this nitridation hydrazine (N2H4 )-based water solutions are used X-ray photoemission analysis has shown that on the nitridized surfaces Ga-N surface bonds are dominant. We demonstrate that the proposed nitridation improves electronic properties of GaAs(100) and produce an effective surface chemical passivation.
Document Details
- Document Type
- Technical Report
- Publication Date
- Jun 18, 1999
- Accession Number
- ADP012988
Entities
People
- Akira Izumi
- T. V. L'vova
- V. L. Berkovits
- V. P. Ulin
Organizations
- Russian Academy of Sciences