Self-Organized InGaAs/GaAs Quantum Wire Nanostructures Grown by Metal-Organic Vapor Phase Epitaxy

Abstract

We report on observation of new type of InGaAs self-assembled surface nanostructures grown on (001) GaAs by Metal-Organic Vapor Phase Epitaxy. Atomic Force NIicroscopy (AFNI) studies show presence of a homogeneous system of well ordered shaped rectangular nanoislands extended along the 100 direction. Optical properties of the structures studied by photoluminescence (PL) and photoconductivity (PC) spectroscopy indicate presence of 1D electronic states.

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Document Details

Document Type
Technical Report
Publication Date
Jun 18, 1999
Accession Number
ADP012990

Entities

People

  • B. N. Zvonkov
  • D. O. Filatov
  • I. A. Karpovich
  • N. V. Baidus
  • Y. Y. Gushina

Tags

Communities of Interest

  • Advanced Electronics

DTIC Thesaurus Topics

  • Education
  • Electric Fields
  • Electronic States
  • Microstructure
  • Monomolecular Films
  • Nanostructures
  • Optical Properties
  • Photosensitivity
  • Polarization
  • Quantum Wells
  • Quantum Wires
  • Spectra
  • Thickness
  • Universities
  • Vapor Phases

Fields of Study

  • Materials science

Readers

  • Quantum Dot Semiconductor Device Photonics and Graphene Optoelectronic Materials and THz Physics.
  • Thin Film Deposition Science.

Technology Areas

  • Microelectronics
  • Microelectronics - Graphene
  • Quantum Computing