Influence of Initial MBE Growth Stage on Properties of Hexagonal InN/Al2O3 Films
Abstract
The InGaN alloys have acquired a lot of interest for using in the active region of light emitting and lasers diodes as the band gap of these materials can be varied over nearly the whole visible spectral range when changing In content from 0 to pure InN. However due to the low dissociation temperature of InN (about 63O C ) and the nitrogen equilibrium vapor pressure with a growth temperature (T(g)) good quality InN epilayers are still not easily attainable. Taking account of the large lattice mismatch between InN and sapphire it is also expected that a strain induced enhanced N re-evaporation at the initial InN monolayer growth would require a 100 - 150 C decrease of T(s) to avoid a liquid to droplet formation followed by a columnar structure growth. As a result there are only few papers to our knowledge on epitaxial InN properties and no reports on hexagonal InN films MBE growth.
Document Details
- Document Type
- Technical Report
- Publication Date
- Jun 18, 1999
- Accession Number
- ADP012991
Entities
People
- V. A. Vekshin
- V. V. Emtsev
- V. V. Mamutin
- V. V. Ratnikov
- V. Y. Davydov
Organizations
- Russian Academy of Sciences