Annealing and Morphology Transformation Effects in MOCVD Grown of Self-Organized InAlAs-AlGaAs Quantum Dots
Abstract
We report on MOCVD growth of the (In,Al)As-se1f-organized quantum dots (QD) on (Al,Ga)As. We demonstrate that dense arrays (about 2 x 10exp10/cm2) of small ( about 5 nm) QD are formed during annealing (75O C, 20 min, excess of arsine) of In(0.5)Al(0.5)As deposited at 500 C on a Al(0.6)Ga(0.4)As surface as demonstrated by atomic force and transmission electron microscopies and by photoluminescense. We determined that the opening process continues at room temperature and gives rise to large clusters of submicron size after time of one. In contrast, an identical sample that is not annealed shows low density (2 x 10exp9/cm2) of the QDs. Aging in this case gives results in a gradual smoothing of the morphology.
Document Details
- Document Type
- Technical Report
- Publication Date
- Jun 18, 1999
- Accession Number
- ADP012992
Entities
People
- A. M. Mintairov
- I. Kochnev
- J. L. Merz
- V. M. Lantratov
- Y. Musikhin
Organizations
- Russian Academy of Sciences