Effect of Laser Annealing on Optical Properties of ZnCdSe/ZnSSe Quantum Well Heterostructures
Abstract
A (Zn,Cd)(S,Se) MQW heterostructure is designed and fabricated to allowing control over the optical and electronic properties by an exposure to 488 nm Ar+ laser line. The laser-induced intermixing of elements results in a significant band edge blue shift with a moderate level of introduced defects. By controlling the light pattern on the sample surface this technique allows lateral pattering for fabricating e.g. ultra-narrow stripes or dot-like objects for optoelectronic devices.
Document Details
- Document Type
- Technical Report
- Publication Date
- Jun 18, 1999
- Accession Number
- ADP012994
Entities
People
- A. A. Toropov
- O. V. Nekrutkina
- S V Ivanov
- S. V. Sorokin
- T. V. Shubina
Organizations
- Russian Academy of Sciences